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Dr. Piotr  如iewak

Dr. Piotr 如iewak

Building IM room 302, phone: +48 (22) 234 8748
e-mail: pspiewak@inmat.pw.edu.pl

Scientific interest:
- renewable energy (photovoltaics, thermoelectrics)
- electronic structure and dynamics of point defects in semiconductors
- microdefects in group IV semiconductors
- point defects aggregation into clusters
- multiscale modelling

Research methods:
- density functional theory (DFT)
- molecular dynamics (MD)
- finite element method (FEM)
- finite volume method (FVM)

Research Groups:

Publications:

K.Czelej, K.Cwieka, T.Wejrzanowski, P.Spiewak, K.J.Kurzydlowski

Decomposition of activated CO2 species on Ni(110): Role of surface diffusion in the reaction mechanism

Catalysis Communications, DOI:10.1016/j.catcom.2015.10.034

P.Kwa郾iak, P.如iewak, H.Garbacz, K.J.Kurzyd這wski

Plasticity of hexagonal systems: Split slip modes and inverse Peierls relation in α-Ti

Physical Review B 89 (2014) 144105

M.Krynski, W.Wrobel, J.R.Dygas, J.Wrobel, M.Malys, P.如iewak, K.J.Kurzyd這wski, F.Krok, I.Abrahams

Ab-initio molecular dynamics simulation of δ-Bi3YO6

Solid State Ionics 245-246 (2013) 43

P.如iewak, K.J.Kurzyd這wski

Formation and migration energies of the vacancy in Si calculated using the HSE06 range-separated hybrid functional

Physical Review B 88 (2013) 195204

P.如iewak, J.Vanhellemont, K.J.Kurzyd這wski

Improved calculation of vacancy properties in Ge using the Heyd-Scuseria-Ernzerhof range-separated hybrid functional

Journal of Applied Physics 110 (2011) 063534

J.Vanhellemont, J.Lauwaert, A.Witecka, P.如iewak, I.Romandic, P.Clauws

Experimental and theoretical study of the thermal solubility of the vacancy in germanium

Physica B: Condensed Matter 404 (2009) 4529-4532

J.Vanhellemont, P.如iewak, K.Sueoka, E.Simoen, I.Romandic

A Comparison of Intrinsic Point Defect Properties in Si and Ge

in Doping Engineering for Front-End Processing, edited by B.J. Pawlak, M. Law, K. Suguro, M.L. Pelaz (Mater. Res. Soc. Symp. Proc. Volume 1070, Warrendale, PA, 2008) 1070–E06–05

P.如iewak, J.Vanhellemont, K.Sueoka, K.J.Kurzyd這wski, I.Romandic

Ab-initio Simulation of Formation and Diffusion Energies of Intrinsic Point Defects in Ge

ECS Transactions Volume 16 Issue 10 (2008) 659

P.如iewak, J.Vanhellemont, K.Sueoka, K.J.Kurzyd這wski, I.Romandic

Ab-initio simulation of self-interstitial in germanium

Materials Science in Semiconductor Processing 11 (2008) 328-331

P.如iewak, J.Vanhellemont, K.Sueoka, K.J.Kurzyd這wski, I.Romandic

First principles calculations of the formation energy and deep levels associated with the neutral and charged vacancy in germanium

Journal of Applied Physics 103 (2008) 086103

P.如iewak, K.J.Kurzyd這wski, K.Sueoka, I.Romandic, J.Vanhellemont

First Principles Calculations of the Formation Energy of the Neutral Vacancy in Germanium

Solid State Phenomena 131-133 (2008) 241

J.Vanhellemont, P.如iewak, K.Sueoka, I.Romandic, E.Simoen

Intrinsic point defect properties and engineering in silicon and germanium Czochralski crystal growth

in 5th International Symposium on Advanced Science and Technology of Silicon Materials, http://fukuoka.riam.kyushu-u.ac.jp/hawaii2008/pdf/D-03.pdf

J.Vanhellemont, P.如iewak, K.Sueoka, I.Romandic

On intrinsic point defect cluster formation during Czochralski crystal growth

physica status solidi (c) 6 (2009) 1906-1911

J.Vanhellemont, J.VanSteenbergen, F.Holsteyns, P.Roussel, M.Meuris, K.M造narczyk, P.如iewak, W.Geens, I.Romandic

On the characterisation of grown-in defects in Czochralski-grown Si and Ge

Journal of Materials Science: Materials in Electronics 19 (2008) 24

I.Romandic, P.如iewak, P.Wabinski, K.Mlynarczyk, J.Vanhellemont

Progress in CZ Germanium Production, New Application Opportunities

Materials Science in Semiconductor Processing (2008) in press

K.Sueoka, P.如iewak, J.Vanhellemont

Ab Initio Analysis of Point Defects in Plane-Stressed Si or Ge Crystals

ECS Transactions 11 (2007) 375

P.如iewak, K.Sueoka, J.Vanhellemont, K.J.Kurzyd這wski, K.M造narczyk, P.Wabi雟ki, I.Romandic

Ab initio calculation of the formation energy of charged vacancies in germanium

Physica B: Condensed Matter 401-402 (2007) 205

J.Vanhellemont, P.如iewak, K.Sueoka, I.Romandic

Intrinsic (point) defects in silicon and germanium, similar but so different

in Forum on the Science and Technology of Silicon Materials 2007, edited by H. Yamada-Kaneta and H. Ono (Shinkousoku Printing Inc., 2007) pp. 113-127.

P.如iewak, M.Muzyk, K.J.Kurzyd這wski, J.Vanhellemont, P.Wabi雟ki, K.M造narczyk, I.Romandic

Molecular dynamics simulation of intrinsic point defects in germanium

Journal of Crystal Growth 303 (2007) 12

J.Vanhellemont, P.如iewak, K.Sueoka

On the solubility and diffusivity of the intrinsic point defects in germanium

Journal of Applied Physics 101 (2007) 036103

P.如iewak, K.J.Kurzyd這wski, J.Vanhellemont, P.Wabi雟ki, K.M造narczyk, I.Romandic

Simulation of Vacancy Cluster Formation and Binding Energies in Single Crystal Germanium

in Semiconductor Defect Engineering—Materials, Synthetic Structures and Devices II, edited by S. Ashok, P. Kiesel, J. Chevallier, T. Ogino (Mater. Res. Soc. Symp. Proc. Volume 994, Warrendale, PA, 2007), 0994-F03-08

P.如iewak, K.J.Kurzyd這wski, J.Vanhellemont, P.Claus, P.Wabi雟ki, K.M造narczyk, I.Romandic, A.Theuwis

Simulation of intrinsic point defekt properties and vacancy clustering during Czochralski germanium crystal growth

Materials Science in Semiconductor Processing 9 (2006) 465

J.Lauwaert, S.Hens, P.如iewak, D.Wauters, D.Polman, I.Romandic, P.Clauws, J.Vanhellemont

Simulation of point defect diffusion in germanium

Physica B: Condensed Matter 376-377 (2006) 257

J.Vanhellemont, S.Hens, J.Lauwaert, O.DeGryse, P.Vanmeerbeek, D.Poelman, P.如iewak, I.Romandic, A.Theuwis, P.Clauws

Recent progress in understanding of lattice defects in Czochralski-grown germanium: catching-up with silicon

Solid State Phenomena 108-109 (2005) 683

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